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| ! " # $$%& '( )*+, ' !"#$ % % & ' () & * + % & ,+ '--,'",#. ,& / & 0 " 1 " % '+ & !'"1 ! " " ! # $ $ # %!! $ & $ $ & '! # # # ' # ( )* #( ( + " ! , # - !! . # ' (+ # ( '! / 0 0 " " ! ' 0 " 1 1 " 23 4 0 0 " 1 1 " 253 # " $ , )$ 6 7 6 !5' 89 !5 89 !"# $% $ &!'( )*+ $ , -$ .-- $ / , $% $ .--$+ $ , -$ - * , 0"% , $ , 1-$+ $ -$ - ) 2# % 3 ) *+ $ )-$ ) 4 ' ' &45( )*+ $ , )-$ 1 6 7 , $% $ 8 )*+ $ )-$ 1 - 1 $ 2# $% $ )*+ $ , -$ ) ' 9 9 6 ): ; , % < % $ 6--$+ $ , )-$+ 1* 1- :1- '= 3 $ $+ $ , -$+ 3 )8 / ): 2 4 :7 4 ) *+ ' 0 )-- + $ , )-$ 6- 7- 433 33 )6- 1- 0 1 2 3 4 5 6 0 5 10 15 20 2SK2666 transfer characteristics tc = - 55 c 25 c 100 c 150 c v ds = 25v typ gate-source voltage v gs [v] drain current i d [a] static drain-source on-state resistance 0.1 1 10 100 -50 0 50 100 150 2SK2666 v gs = 10v pulse test typ i d = 1.5a case temperature tc [ c] static drain-source on-state resistance r ds(on) [ w ] gate threshold voltage 0 1 2 3 4 5 6 -50 0 50 100 150 2SK2666 v ds = 10v i d = 1ma typ case temperature tc [ c] gate threshold voltage v th [v] safe operating area 0.01 0.1 1 10 1 10 100 1000 2SK2666 100 m s tc = 25 c single pulse 200 m s 1ms 10ms dc drain-source voltage v ds [v] drain current i d [a] r ds(on) limit transient thermal impedance 0.01 0.1 1 10 2SK2666 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 time t [s] transient thermal impedance q jc(t) [ c/w] 0 20 40 60 80 100 0 50 100 150 2SK2666 single avalanche energy derating [%] starting channel temperature tch [ c] single avalanche energy derating capacitance 1 10 100 1000 10000 0 20 40 60 80 100 2SK2666 0.005 f=1mhz ta=25 c typ ciss coss crss drain-source voltage v ds [v] capacitance ciss coss crss [pf] single avalanche current - inductive load 0.1 1 10 2SK2666 0.1 1 10 100 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 v dd = 100v v gs = 15v ? 0v rg = 70 w i as = 3a e as = 48mj e ar = 4.8mj inductance l [mh] single avalanche current i as [a] 0 20 40 60 80 100 0 50 100 150 2SK2666 power derating power derating [%] case temperature tc [ c] 0 10 20 30 40 50 0 100 200 300 400 500 2SK2666 0 5 10 15 20 200v gate charge characteristics i d = 3a typ 100v v dd = 400v v gs v ds gate charge qg [nc] drain-source voltage v ds [v] gate-source voltage v gs [v] |
Price & Availability of 2SK2666
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